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| (R) BTA20 Series 20A TRIACS A2 SNUBBERLESSTM Table 1: Main Features Symbol IT(RMS) VDRM/VRRM IGT (Q1) (max) Value 20 600 and 700 35 and 50 Unit A V mA G A1 DESCRIPTION The BTA20 BW/CW triac family are high performance glass passivated chips technology. The snubberless concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/s A1 A2 G TO-220AB Insulated Table 2: Order Codes Part Numbers BTA20-600BWRG BTA20-600CWRG BTA20-700BWRG BTA20-700CWRG Marking BTA20-600BW BTA20-600CW BTA20-700BW BTA20-700CW Value Tc = 70C F = 50 Hz F = 60 Hz tp = 10 ms t = 10 ms t = 8.3 ms 20 210 200 200 20 100 VDSM/VRSM + 100 4 16 Tj = 125C 1 - 40 to + 150 - 40 to + 125 Unit A A As A/s V A V W C Repetitive F = 50 Hz Tj = 125C Non repetitive tp = 10 ms tp = 20 s tp = 20 s Tj = 25C Tj = 125C VDSM/VRSM Non repetitive peak off-state voltage IGM VGM PG(AV) Tstg Tj February 2006 Peak gate current Peak positive gate voltage Average gate power dissipation Storage junction temperature range Operating junction temperature range REV. 2 1/6 BTA20 Series Tables 4: Electrical Characteristics (Tj = 25C, unless otherwise specified) Symbol IGT (1) VGT VGD IH (2) IL VD = VDRM RL = 3.3 k Tj = 125C IT = 500 mA gate open I - III IG = 1.2 IGT II I - II - III dV/dt (2) VD = 67 %VDRM gate open Tj = 125C Tj = 125C Test Conditions Quadrant ALL ALL ALL MIN. MAX. MAX. MIN. MAX. TYP. MAX. TYP. MIN. TYP. MIN. 75 50 90 750 500 36 18 BTA20 BW 2 50 1.5 0.2 50 80 500 250 22 11 V/s V/s mA CW 1 35 Unit mA V V mA VD = 12 V RL = 33 (dV/dt)c (2) (dI/dt)c = 20 A/ms Table 5: Static Characteristics Symbol VTM (2) IDRM IRRM ITM = 28 A VDRM = VRRM Test Conditions tp = 380 s Tj = 25C Tj = 25C Tj = 125C MAX. MAX. Value 1.70 10 3 Unit V A mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. Table 6: Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(j-a) Junction to case (AC) Junction to case (DC) Junction to ambient Parameter Value 2.1 C/W 2.8 60 C/W Unit 2/6 BTA20 Series Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact P(W) 30 Rth = 0C/W P(W) 30 25 20 Tcase(C) 65 75 Rth = 0.5C/W 25 = 180 = 120 20 15 10 180 Rth = 1.5C/W 85 95 Rth = 1C/W 15 10 5 0 0 5 = 90 = 60 = 30 105 115 5 IT(RMS)(A) 0 10 15 20 0 20 40 Tamb(C) 125 60 80 100 120 Figure 3: RMS on-state current versus case temperature (full cycle) IT(RMS)(A) 25 Figure 4: Relative variation of thermal impedance versus pulse duration K=[Zth/Rth] 1 = 180 20 Zth(j-c) 15 10 Zth(j-a) 0.1 5 TC(C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1.E-3 tp(s) 1.E-2 1.E-1 1.E+0 1.E+1 1.E+2 5.E+2 Figure 5: On-state (maximum values) ITM(A) 1000 Tj max. Vt0 = 1.04V Rd = 20 m characteristics Figure 6: Non repetitive surge peak on-state current versus number of cycles ITSM(A) 1000 t=20ms 100 One cycle Tj = Tj max. Non repetitive Tj initial=25C 10 Tj = 25C. 1 1 2 VTM(V) 3 4 5 Number of cycles 100 1 10 100 1000 3/6 BTA20 Series Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t ITSM(A), I2t (A2s) 1000 Tj initial=25C Figure 8: Relative variation of gate trigger current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25C] 2.5 2.0 ITSM 1.5 IGT 1.0 I2t IH & IL 0.5 tp(ms) 100 Tj(C) 1.00 10.00 0.01 0.10 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 9: Ordering Information Scheme BT A 20 - 600 BW RG Triac series Insulation A = insulated Current 20 = 20A Voltage 600 = 600V 700 = 700V Sensitivity and type BW = 50mA (max.) CW = 35mA (max) Packing mode RG = Tube Table 7: Product Selector Part Numbers BTA20-xxxBWRG BTA20-xxxCWRG Voltage (xxx) 600 V X X 700 V X X Sensitivity 50 mA 35 mA Type Snubberless Package TO-220AB Ins. 4/6 BTA20 Series Figure 10: TO-220AB Insulated Package Mechanical Data DIMENSIONS REF. A B OI L F A I4 l3 a1 l2 c2 b2 C Millimeters Min. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 Typ. Max. Min. 15.90 0.598 Inches Typ. 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 Max. 0.625 a1 a2 B b1 b2 C c1 c2 e F OI c1 a2 M b1 e I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 Table 8: Ordering Information Ordering type BTA20-600BWRG BTA20-600CWRG BTA20-700BWRG BTA20-700CWRG Marking BTA20-600BW BTA20-600CW BTA20-700BW BTA20-700CW TO-220AB Ins. 2.3 g 50 Tube Package Weight Base qty Delivery mode Table 9: Revision History Date Sep-2001 08-Feb-2006 Revision 1A 2 First issue. TO-220AB Ins. delivery mode changed from bulk to tube. Description of Changes 5/6 BTA20 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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